<span lang="fr">Mémoire Kingston KVR1333D3N9 - 8Go</span><span lang="en">Kingston Memory KVR1333D3N9 - 8Gb</span>

Mémoire Kingston KVR1333D3N9 - 8GoKingston Memory KVR1333D3N9 - 8Gb

Mémoire KVR1333D3N9/8G

Kingston Memory 8Gb KVR1333D3N9/8G

Features

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)
Specifications
CL(IDD) : 9 cycles
Row Cycle Time (tRCmin) : 49.125ns (min.)
Refresh to Active/Refresh 
Command Time (tRFCmin) : 260ns (min.)
Row Active Time (tRASmin) : 36ns (min.)
Maximum Operating Power : TBD W*
UL Rating : 94 V - 0
Operating Temperature : 0°C to 85°C
Storage Temperature : -55°C to +100°C
Code 133827
114.99